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mm，光插损为6.3 dB，调制带宽>15 G(@3dB），动态半波电压                              图7 利用光谱法测得相位调制器的调制带宽及半波电压
<6V(@10 GHz），满足OEO等微波光子器件使用对相位调制器体
积小，重量轻的使用需求。

 图6 相位调制芯片及全封装调制器实物图

    5 结论

      本文针对微波光子器件对高速相位调制器件需求，基于
LNOI平台设计并制备了与CMOS流片工艺相兼容的高速薄膜铌酸
锂相位调制器芯片，并对其进行器件封装和光电性能测试，最
终得到器件的光插损为6.3 dB，调制带宽>15 G(@3 dB），动态
半波电压<6V(@10 GHz），整体性能满足光电振荡器等微波光子
系统需求，为下一代更高带宽、更低电压、更小体积的微波光
子器件提供重要指导作用。

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网络电信 二零二四年八月                                                                                 57
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