Page 48 - Market Analysis Report of Optical Communications Field in China & Global market 2021
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WSS, up to 8 line directions, 13 local CDC modules are However, this solution is a true monolithic integrated solution
configured, up to 208 waves of up-drop are supported. with great potential.
At present, the more mature CDC technical solution in the The most potential application of silicon photonics technology in
industry is the Multi-channel Broadcasting Function Optical the field of optical communications is photoelectric collaborative
Switch (MCS). MCS is based on optical switches, couplers and packaging (CPO), which is the mainstream solution for next-
optical amplifier arrays. A large number of active devices will generation on-board optical interconnection. Due to the limitations
affect the reliability of the system. Therefore, the industry is of material characteristics, signal integrity and integration, after
the transmission rate reaches 800G or 1.6T, pluggable optical
generally more optimistic about the NxM WSS solution, which is modules will reach the technical bottleneck. CPO will be ahead of
based on optical switches and WSS arrays, Lower insertion loss traditional pluggable optical devices and on-board optical devices
for up-drop, through reasonable power configuration, intermediate in terms of cost and benefit. Its future application prospects in
amplifiers can be omitted, higher up-drop dimensions can be edge computing, metropolitan area networks, high-performance
supported, the impact on transmission performance is smaller, computing and sensors Very broad.
and the reliability and integration are higher.
3.4 Ubiquitous all-optical network Figure 4. Silicon optical chip and CPO packaging scheme
(picture source: Hengtong Rockley CPO sample diagram)
With the sinking of WDM technology, low-cost ROADM
technology expands to metro access networks and introduces
edge WSS. The application of low-and medium-dimensional
(4D/9D, etc.) WSS at the edge of the metropolitan area will have
cost advantages. The core aggregated, the access layer is currently
based on 10G WDM, gradually introduce low-cost 100G WDM.
Now FTTH has gradually extended to FTTR, FTTD, and FTTT,
and FTTO has expanded to industrial Internet scenarios such
as FTTCampus, FTTFactory, and FTTWorkshop. In the future,
the fifth-generation fixed network (F5G) will realize a gigabit
broadband access network based on 10G PON+WIFI6 and an all- 4. Conclusion
optical transmission and switching network based on 200G/400G, After nearly 50 years of development, optical fiber
further consolidating the all-optical metropolitan area network, communication technology has been widely used in all
data center, Infrastructure such as edge computer rooms, core aspects of the industrial field, running through all fields of the
convergence access computer rooms, pipeline networks, optical
cable networks, and supporting facilities will promote the information industry and modern service industry, becoming an
ubiquitous development of all-optical networks. indispensable technology category, and forming a huge industrial
3.5 Silicon Photonics Technology chain. Zhongtian Technology has been deeply involved in the
Silicon-based optoelectronics technology is the next-generation field of optical communication for many years and has been
core technology of high-speed optical interconnect products. committed to the research of optical communication technology.
Silicon photonics integrated chips are based on high-quality In recent years, it has completed the integrated layout of optical
semiconductor wafers as the platform, which integrates various rods, optical fibers, optical cables, optical chips and optical
active and passive functional photonics devices and electronic devices, and has actively invested resources to develop new
components on a single microchip, the volume and difficulty of types of space division multiplexing research and development
optical device packaging are greatly reduced. Compared with of new technologies such as optical fiber and silicon light. At
traditional packaging technology, silicon-based photonic device present, Zhongtian Technology has formed four major optical
integration technology has significant advantages in cost, power communication product groups: integrated service, infrastructure,
consumption and integration, and with the improvement of
transmission rate and chip manufacturing capabilities, its cost and wireless network, and bearer network, It also planned the four
[3]
power consumption advantages will be more obvious . product groups around cloud, network, edge, end and application
However, Si is a group IV elemental material with an indirect levels, using brand, technology, capital and other advantages to
band gap and weak luminescence performance, how to integrate continue to promote product research and development, plan
a laser light source on a silicon-based chip has become an urgent product production capacity, and support market growth.
problem that needs to be solved. This has also been a hot spot in
the industry and academia in recent years. At present, the light References
source of silicon optical chip is mainly provided through external [1] Qiu Qi (2011) Optical fiber communication technology.
laser grating coupling package or end-face coupling package; the Beijing: Science Press
Flip-chip solution is to directly and passively attach the packaged [2] CLAUSE C B, CAVRAK S. Modeling and experiment of
III-V laser to the silicon optical chip, the solution has also been Raman assisted ultra long-haul terrestrial transmission over
[4]
extensively researched . Another hot research solution for silicon 7500km [A]. Proc. ECOC 2001 [C]. Amsterdam, 2001. WeF1-2.
light sources is to epitaxially grow III-V materials on Si materials, [3] L. Carroll, et.al. "Photonic Packaging: Transforming Silicon
and then process the material structure to form a laser. However, Photonic Integrated Circuits into Photonic Devices", Applied
the problem of lattice constant matching between Si materials and Sciences 6, 426(2016)
III-V materials has not been effectively solved. At present, the [4] D. Liang, J.E. Bowers, "Recent progress in lasers on silicon",
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